200 mm sensor development using bonded wafers

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Processing and Characterization of 300 mm Argon-Annealed Wafers

High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...

متن کامل

Development of Fast Dissolving Sublingual Wafers of Promethazine Hydrochloride

Promethazine hydrochloride, a 5-HT3 antagonist is a powerful antiemetic drug with an oral bioavailability of 25% due to extensive hepatic first pass metabolism and is extremely bitter in taste. To overcome the above draw backs, the present study was carried out to formulate and evaluate fast dissolving taste masked wafers of Promethazine hydrochloride for sublingual administration. Taste maskin...

متن کامل

Silicon etching using only Oxygen at high temperature: An alternative approach to Si micro-machining on 150 mm Si wafers

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both w...

متن کامل

The effect of atmospheric moisture on crack propagation of the interface between directly bonded silicon wafers

Infra-red video sequences were taken of directly bonded silicon wafer pairs undergoing the razor blade crack length test for bond strength in a specially designed jig. A series of tests were carried out under controlled atmospheres of nitrogen at various relative humidities. Analysis of the video images showed that the crack continues to propagate rapidly for several minutes after the blade has...

متن کامل

Fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator wafers

The authors report on the fabrication of 200 nm period blazed transmission gratings on silicon-on-insulator SOI wafers. These critical angle transmission CAT gratings require 3–5 m tall freestanding grating bars with a very high aspect ratio 100 and smooth sidewalls. In order to meet the challenging geometrical requirements, they modified and improved our previously reported process for the fab...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Instrumentation

سال: 2021

ISSN: 1748-0221

DOI: 10.1088/1748-0221/16/02/t02002